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MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
I D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T C < 165 o C, V GS = 10V)
Drain Current Continuous (T C < 163 o C, V GS = 5V)
Drain Current Continuous (T amb = 25 o C, V GS = 10V, with R θ JA = 43 o C/W)
Pulsed
Ratings
30
±20
80
80
34
See Figure 4
Units
V
V
A
E AS
P D
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25 o C
(Note 1)
1246
300
2
mJ
W
W/ o C
T J , T STG Operating and Storage Temperature
-55 to +175
o
C
Thermal Characteristics
R θ JC
Thermal Resistance, Junction to Case
0.5
o
C/W
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient, lin 2 copper pad area
(Note 2)
62
43
o C/W
o C/W
Package Marking and Ordering Information
Device Marking
FDB8832
Device
FDB8832
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
30
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 24V
V GS = 0V
V GS = ± 20V
T J = 150°C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(th)
Gate to Source Threshold Voltage
V DS = V GS , I D = 250 μ A
1.0
1.6
3.0
V
I D = 80A, V GS = 10V
I D = 80A, V GS = 5V
-
-
1.4
1.5
1.9
2.1
r DS( on)
Drain to Source On Resistance
I D = 80A, V GS = 4.5V
I D = 80A, V GS = 10V
T J = 175°C
-
-
1.6
2.3
2.2
3.0
m Ω
Dynamic Characteristics
C iss
C oss
C rss
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 15V, V GS = 0V,
f = 1MHz
V GS = 0.5V, f = 1MHz
V GS = 0 to 10V
-
-
-
-
-
11400
2140
1260
1.2
204
-
-
-
-
265
pF
pF
pF
Ω
nC
Q g(5)
Q g(TH)
Q gs
Q gs2
Q gd
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0 to 5V
V GS = 0 to 1V
V DD = 15V
I D = 80A
I g = 1.0mA
-
-
-
-
-
100
10.9
33
22
43
130
14.2
-
-
-
nC
nC
nC
nC
nC
FDB8832 Rev. A1
2
www.fairchildsemi.com
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